A single signal adjustable gate driver circuit for SiC/Si hybrid switches

A single signal adjustable gate drive circuit design method is proposed to address the problems of complex circuits, high costs, and difficult synchronization control in traditional dual drive chips and dual PWM signal schemes for SiC/Si hybrid switches. This circuit achieves differentiated driving voltage through a single PWM signal and a single driving chip, combined with the optimization of voltage regulator diode embedding and coupling capacitance to achieve synchronous conduction of SiC and Si in a time-sharing manner, and provides selection and optimization methods for key components. Build an LTspice simulation model and experimental platform, and conduct 100W~2kW load testing under 300V input and 50kHz switching frequency. The results show that the proposed circuit reduces the cost by about 40% compared to the dual drive scheme, improves light load efficiency by 3%~5%, and significantly improves heavy load reliability. It can be applied to converters such as new energy vehicle chargers.