A Study on Driving and Control Techniques for kV-Level SiC-MOSFETs in Automotive DC/DC Converters

To address gate drive oscillation and control noise sensitivity challenges in kV-Level SiC-MOSFET applications for a automotive LLC converter for electric heavy-duty trucks, this paper proposes a collaborative optimization scheme for drive and control. On the high-voltage side, switching oscillations are suppressed by optimizing the gate drive loop and introducing negative voltage turn-off; on the low-voltage high-current side, anti-interference capability is enhanced by adjusting driver IC thresholds and optimizing PCB layout. Experimental results demonstrate that the proposed techniques effectively eliminate gate voltage oscillations, achieve stable synchronous rectification, and maintain system efficiency above 91% across the entire input voltage range, validating the effectiveness of this optimization strategy in solving SiC device engineering application challenges.