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基于Fluent的IGBT模块散热基板的优化设计

Optimization design of IGBT module heat dissipation substrate based on Fluent

  • 摘要: 在新能源汽车领域,IGBT模块负责控制电机驱动与电池充电,在高负荷工况下热量积聚迅速,若散热不良将导致模块过热失效,降低整车安全性与耐久性。为提高IGBT模块的散热性能,创新优化了英飞凌公司IGBT模块散热基板的结构,将英飞凌公司的散热基板背部Pin针由顺排布局改成叉排布局,密度间距由2.5mm缩至2mm,基板中间增设三条直线导流板。首先采用SOLIDWORKS 2025软件对IGBT模块与散热基板进行三维建模,其次利用ANSYS软件Fluent模块,计算流体动力学(CFD)的流固耦合传热计算模型进行仿真分析,仿真结果表明:优化前,IGBT芯片最高温度为102℃,最低温度为71.7℃,出口流速为0.35m/s;优化后,IGBT芯片最高温度为98.6℃,最低温度为69.6℃,出口流速为0.72m/s。优化前后对比,IGBT芯片最高温度下降3.4℃,最低温度下降2.1℃,温差下降1.3℃,冷却液在流道中的平均流速与覆盖率有所均有所提高。有利于IGBT芯片降温,保障IGBT模块工作的安全性与稳定性。

     

    Abstract: In the field of new energy vehicles, IGBT module is responsible for controlling motor drive and battery charging. Under high load conditions, heat accumulates rapidly. If the heat dissipation is not good, the module will overheat and fail, reducing the safety and durability of the vehicle. In order to improve the heat dissipation performance of the IGBT module, the structure of the heat dissipation substrate of the IGBT module of Infineon Company was innovatively optimized. The Pin needle on the back of the heat dissipation substrate of Infineon Company was changed from the in-line layout to the staggered layout. The density spacing was reduced from 2.5mm to 2mm, and three straight guide plates were added in the middle of the substrate. Firstly, SOLIDWORKS 2025 software is used to build a three-dimensional model of IGBT module and heat dissipation substrate. Secondly, ANSYS software Fluent module is used to simulate and analyze the fluid-solid coupling heat transfer calculation model of computational fluid dynamics ( CFD ). The simulation results show that before optimization, the maximum temperature of IGBT chip is 102 °C, the minimum temperature is 71.7 °C, and the outlet flow rate is 0.35 m / s. After optimization, the maximum temperature of IGBT chip is 98.6 °C, the minimum temperature is 69.6 °C, and the outlet flow rate is 0.72 m / s. Compared before and after optimization, the maximum temperature of IGBT chip decreased by 3.4 °C, the minimum temperature decreased by 2.1 °C, the temperature difference decreased by 1.3 °C, and the average flow rate and coverage of coolant in the flow channel increased. It is beneficial to the cooling of IGBT chip and the safety and stability of IGBT module.

     

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