宽增益范围LLC谐振变换器整流侧寄生电容效应及电压增益建模分析
Analysis of Rectifier-Side Parasitic Capacitance Effects and Voltage Gain Modeling of LLC Resonant Converters in Wide Gain Range Applications
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摘要: 针对LLC谐振变换器在偏离谐振点时,整流侧二极管结电容效应导致输出电压理论预测值与实际结果有较大误差的问题,提出一种精确电压增益模型。首先,将结电容折算至原边并建立等效拓扑。然后,基于过谐振工作模态进行时域解析,结合稳态边界条件推导输出电压表达式。最后,搭建1kW实验样机进行测试,结果表明所提模型可准确预测输出电压,有效反映整流侧寄生电容对电压增益的影响,可为LLC谐振变换器精确设计提供依据。Abstract: To address the significant discrepancy between theoretically predicted and experimentally measured output voltages caused by the junction capacitance effect of rectifier-side diodes in LLC resonant converters when operating away from the resonant point, an accurate voltage gain model is proposed. First, the junction capacitance is referred to the primary side, and an equivalent topology is established. Then, time-domain analysis is performed based on the above-resonance operating modes, and the output voltage expression is derived by combining the steady-state boundary conditions. Finally, a 1 kW experimental prototype is built for verification. The results show that the proposed model can accurately predict the output voltage and effectively reflect the influence of rectifier-side parasitic capacitance on the voltage gain, providing a theoretical basis for the precise design of LLC resonant converters.
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