一种面向SiC/Si混合开关的单信号可调门极驱动电路
A single signal adjustable gate driver circuit for SiC/Si hybrid switches
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摘要: 针对SiC/Si混合开关传统双驱动芯片、双PWM信号方案电路复杂、成本高、同步控制难的问题,提出一种单信号可调门极驱动电路设计方法。该电路通过单 PWM 信号与单驱动芯片实现差异化驱动电压,结合稳压二极管嵌位与耦合电容优化实现SiC与Si的分时同步导通,并给出关键元件的选型与优化方法。搭建LTspice仿真模型与实验平台,在300V输入、50kH开关频率下进行100W~2kW 负载测试,结果表明,所提电路相比双驱动方案成本降低约40%,轻载效率提升3%~5%,重载可靠性显著提高,可应用于新能源车载充电器等变换器。Abstract: A single signal adjustable gate drive circuit design method is proposed to address the problems of complex circuits, high costs, and difficult synchronization control in traditional dual drive chips and dual PWM signal schemes for SiC/Si hybrid switches. This circuit achieves differentiated driving voltage through a single PWM signal and a single driving chip, combined with the optimization of voltage regulator diode embedding and coupling capacitance to achieve synchronous conduction of SiC and Si in a time-sharing manner, and provides selection and optimization methods for key components. Build an LTspice simulation model and experimental platform, and conduct 100W~2kW load testing under 300V input and 50kHz switching frequency. The results show that the proposed circuit reduces the cost by about 40% compared to the dual drive scheme, improves light load efficiency by 3%~5%, and significantly improves heavy load reliability. It can be applied to converters such as new energy vehicle chargers.
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