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基于SiC MOSFET的双向DC-DC变换器稳态损耗建模与热设计初步分析

Preliminary Analysis of Steady-State Loss Modeling and Thermal Design for SiC MOSFET-Based Bidirectional DC-DC Converters

  • 摘要: 面向储能/车载/直流微网的双向DC-DC,构建了覆盖导通、开关、Coss/二极管、磁件与辅助损耗的SiC稳态损耗模型,提出了电-热协同迭代与紧凑热网络等效,并基于DAB样机与双脉冲测试完成参数辨识与模型校准。研究结果表明,预测与实测效率/温升偏差在代表性工况下约在10%以内,满足温升裕度与实时性要求,具备工程推广价值。

     

    Abstract: For bidirectional DC-DC converters in energy storage, automotive, and DC microgrid applications, this work develops a SiC-based steady-state loss model covering conduction, switching, Coss/diode, magnetic, and auxiliary losses. An electro-thermal co-iteration scheme and a compact thermal-network equivalence are proposed. Using a DAB prototype and double-pulse tests, we perform parameter identification and calibrate the model. Results show that, under representative operating conditions, the predicted efficiency and temperature deviate from measurements by about 10%, meeting thermal-margin and real-time requirements and demonstrating strong potential for engineering deployment.

     

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